Samsung nthuav tawm nws cov phiaj xwm hauv kev lag luam semiconductor ntawm lub rooj sib tham hauv Tebchaws Meskas. Nws tau qhia txog kev qhia txog kev hloov pauv mus rau 7nm LPP (Low Power Plus), 5nm LPE (How Power Early), 4nm LPE / LPP thiab 3nm Gate-All-All-Around Early/Plus thev naus laus zis.
Lub South Kauslim loj heev yuav pib tsim 7nm LPP thev naus laus zis, uas yuav siv EUV lithography, nyob rau ib nrab xyoo tom ntej, thaum tib lub sijhawm tus neeg sib tw TSMC xav pib tsim khoom nrog kev txhim kho 7nm + txheej txheem thiab pib pheej hmoo ntau lawm nrog 5nm txheej txheem. .
Samsung yuav pib tsim cov chipsets nrog 5nm LPE txheej txheem thaum kawg ntawm 2019 thiab 4nm LPE / LPP txheej txheem thaum xyoo 2020. Nws yog 4nm thev naus laus zis uas yuav dhau los ua thev naus laus zis kawg uas yuav siv FinFET transistors. Ob lub 5nm thiab 4nm txheej txheem yuav tsum txo qhov loj ntawm lub chipset, tab sis tib lub sij hawm nce kev ua tau zoo thiab txo kev noj.
Pib nrog 3nm thev naus laus zis, lub tuam txhab yuav hloov mus rau nws tus kheej MBCFET (Multi Choj Channel FET) GAA (Gate All Around) architecture. Yog tias txhua yam mus raws li kev npaj, chipsets yuav tsum tau tsim hauv 3 siv cov txheej txheem 2022nm.
